<P>We report on the growth and characterization of patterned and uniformly distributed GaN microcrystals with well-defined facets and epitaxy. The microcrystals were grown on a mask patterned by lithography. The GaN microcrystals were formed by ...
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https://www.riss.kr/link?id=A107728664
2008
-
SCOPUS,SCIE
학술저널
015406
0
상세조회0
다운로드다국어 초록 (Multilingual Abstract)
<P>We report on the growth and characterization of patterned and uniformly distributed GaN microcrystals with well-defined facets and epitaxy. The microcrystals were grown on a mask patterned by lithography. The GaN microcrystals were formed by ...
<P>We report on the growth and characterization of patterned and uniformly distributed GaN microcrystals with well-defined facets and epitaxy. The microcrystals were grown on a mask patterned by lithography. The GaN microcrystals were formed by selective-area epitaxy using metal-organic chemical-vapour deposition. The GaN microcrystals have similar sizes and shapes. Each microcrystal consists of an upper and a lower part, which are rotated by 30?. Transmission electron microscopy shows that there is a rather clear interface between the two parts of the crystal, suggesting a sudden change in the growth direction. We performed <I>ab initio</I> calculations for the surface energies of hexagonal GaN, and the growth morphology is explained based on surface energy considerations.</P>