<P>Atomic layer etching (ALE) could be an important next-generation etching technique, applicable to various semiconductor materials including III–V compound materials such as indium gallium arsenide (InGaAs) which has high carrier mobilit...
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https://www.riss.kr/link?id=A107505739
2017
-
SCOPUS,SCIE
학술저널
254007
0
상세조회0
다운로드다국어 초록 (Multilingual Abstract)
<P>Atomic layer etching (ALE) could be an important next-generation etching technique, applicable to various semiconductor materials including III–V compound materials such as indium gallium arsenide (InGaAs) which has high carrier mobilit...
<P>Atomic layer etching (ALE) could be an important next-generation etching technique, applicable to various semiconductor materials including III–V compound materials such as indium gallium arsenide (InGaAs) which has high carrier mobility, an advantageous characteristic in nanoscale electronic devices. In this study, the ALE characteristics of InGaAs have been investigated using a reactive ion beam technique. For the ALE of InGaAs, chlorine radicals/low-energy (10–19 eV) reactive ions and low-energy (5–8 eV) Ar<SUP>+</SUP> ions were used for adsorption and desorption, respectively, during the etch cycle to precisely control the etch depth and to minimize the surface damage of the InGaAs. By using the ALE technique, a constant etch rate of 1.1 Å/cycle could be obtained for InGaAs, as well as an infinite etch selectivity of InGaAs over various materials such as photoresist, silicon, amorphous carbon layer, SiO<SUB>2</SUB>, and HfO<SUB>2</SUB>. The surface composition and surface roughness of the InGaAs after ALE were similar to those of as-received un-etched InGaAs.</P>