A 0.1 cc power amplifier(PA) multi-chip module (MCM) for an
IMT-2000 handset has been developed using InGaP/GaAs
heterojunction bipolar transistors (HBT). PA MMIC with maximum
power and efficiency considering linearity was designed and
fabricated. An ...
A 0.1 cc power amplifier(PA) multi-chip module (MCM) for an
IMT-2000 handset has been developed using InGaP/GaAs
heterojunction bipolar transistors (HBT). PA MMIC with maximum
power and efficiency considering linearity was designed and
fabricated. An active-bias circuit has been employed for
temperature compensation and reduction in idling current of a PA.
The fabricated PA MMIC chip size is 1.5 $\times$ 1.1 mm$^2$ and
the output power results showed gain = 26.3 dB, $P_{out}$ = 27
dBm, and power added efficiency, PAE = 33 \% for load-pull
measurement with output matching. An MCM package with input-output
matching circuit is adopted for low-cost and very small size
package. For the module, bare ICs' were wire-bonded on the package
substrate and the thermal vias under the substrate for effective
thermal dissipation were formed. The matching circuits could be
modified by adding ``off-chip'' elements for a maximum output
power. Under 3.3 V operation, the MCM achieved an output power of
27.5 dBm, a PAE of 32 \%, and a gain of 26 dB.