펄스 레이저 방법으로 성장한 InGaZnO4 박막의 증착 온도에 따른 물리적 특성 연구 = (The) growth temperature dependent physical properties of InGaZnO4 thin films grown by pulsed laser deposition

다국어 초록 (Multilingual Abstract)

Recent eort for the realization of exible displays demands transparent oxide semiconductor materials, which exhibits the higher transparency near the visible region and mobility (> 10 cm2/Vs) than currently available Si-based
display materials. Among them InGaZnO4 is one of the prominent candidate materials for the potential applications such as head-mounted-display, liquid crystal display, plasma display panel, e-paper and etc. In this thesis,
we report the growth temperature dependent characteristics of InGaZnO4 thin lm using x-ray photoelectron spectroscopy (XPS), ultra violet visible near infrared(UV-VIS-NIR), x-ray diraction (XRD), and field emission-scanning electron microscopy (FE-SEM).
The lms were deposited on to Al2O3 (0001) substrates
using pulsed laser deposition for various deposition temperatures. Based on XRD and FE-SEM observation,
as growth temperature increased, the crystal structure changed from amorphous to polycrystalline even though there were no noticeable chemical structure changes from XPS measurement. On the other hand, the resistance for the polycrystalline films is higher than that of amorphous films, which could be attributed to the grain boundary
scattering. The mobility of the lms also decreased as the growth temperature increased while the carrier concentration increased. It had been reported that
the increase of carrier concentration was associated with the increase of band gap energy due to Burstein-Moss effect. The observed optical band gap from
UV-VIS-NIR measurements conrmed that the increase of band bap as growth temperature increased.

목차 (Table of Contents)

• Ⅰ. 서론 1
• Ⅱ. InGaZnO4 세라믹의 물리적 성질 및 구조 5
• Ⅲ. 실험 방법 8
• 1. InGaZnO4 세라믹 제조 8
• 2. Pulsed Laser Deposition 방법에 의한 박막 제조 10
• 2-1 Pulsed Laser Deposition 장치의 구성 10
• 2-2 Pulsed Laser Deposition의 원리 12
• 2-3 InGaZnO4박막 제조 15
• 3. 박막의 구조적 특성 측정 16
• 3-1 X-선 회절 측정 16
• 3-2 Field Emission-Scanning Electron Microscope 측정 18
• 4. 박막의 화학적 특성 측정 20
• 4-1 X-선 광전자 분광법 원리 및 분석 방법 20
• 4-2 X-선 광전자 분광법 측정 조건 26
• 5. 박막의 전기적 특성 측정 27
• 5-1 van der Pauw 방법 27
• 5-2 Hall effect 원리 및 측정 32
• 5-3 온도에 따른 비저항 측정 36
• 6. 박막의 광학적 특성 측정 37
• 6-1 원리 37
• 6-2 측정 방법 39
• Ⅳ. 결과 및 논의 40
• 1. InGaZnO4 세라믹의 특성 연구 40
• 2. 증착 온도에 따른 InGaZnO4 박막의 특성 연구 42
• 2.1 InGaZnO4 박막의 구조적 특성 분석 42
• 2.2 InGaZnO4 박막의 표면 형상 분석 44
• 2.3 InGaZnO4 박막의 화학적 특성 분석 46
• 2.4 InGaZnO4 박막의 전기적 특성 분석 49
• 2.5 InGaZnO4 박막의 광학적 특성 분석 52
• Ⅴ.결론 57
• 참고 문헌 59
• Abstract 64