Effect of Growth Cycles on the Luminescence Properties of InP/InGaP Quantum Structures Grown Using Migration-Enhanced Epitaxy

다국어 초록 (Multilingual Abstract)

The luminescence properties of InP/InGaP quantum structures (QSs) grown using migration-enhanced epitaxy (MEE) with different numbers of repetition of the growth cycles are investigated using temperature-dependent photoluminescence (PL) and time-resolved PL. As the number of MEE repetition cycles increases from 3 to 8, the main PL peak originating from quantum dashes (QDashes) is red-shifted from 1.74 to 1.59 eV, owing to the change in the aspect-ratio of InP QDashes, whereas the PL peak energy originating from InP quantum dots and InGaP wetting layer remains nearly constant. The sample grown with six MEE repetition cycles shows the strongest integrated PL intensity with a comparatively narrow linewidth at room temperature. The six-cycled sample demonstrates an increase in PL decay time and radiative lifetime up to the highest temperature (120 K). These results indicate that the structural and luminescence properties of the InP/InGaP QSs can be controlled by adjusting the number of MEE repetition cycles; the best optical properties are obtained with the six-cycled InP/InGaP QSs sample at a growth temperature of 480 ℃.

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