Bi4Ti3O12-SrBi4Ti4O15 thin lms have been prepared on Pt/Ti/SiO2/Si by pulsed laser deposition
(PLD) and their crystalline and electrical properties have been characterized. After oxygen
annealing, X-ray diraction (XRD) patterns and grain sizes in atom...
Bi4Ti3O12-SrBi4Ti4O15 thin lms have been prepared on Pt/Ti/SiO2/Si by pulsed laser deposition
(PLD) and their crystalline and electrical properties have been characterized. After oxygen
annealing, X-ray diraction (XRD) patterns and grain sizes in atomic force microscopy (AFM)
images did not change very much. But P-E hysteresis loop measured at 60 Hz has been improved
very much after oxygen annealing. The values of 2Pr and 2Ec were 32 C/cm2 and 190 kV/cm,
respectively, after oxygen annealing while 2Pr and 2Ec were 20 C/cm2 and 145 kV/cm, respectively,
before oxygen annealing. C-V hysteresis loops shows reasonable results compared with P-E
hysteresis loops both before and after oxygen annealing. The relative dielectric constant and dielectric
loss were 433 and 0.037, respectively, after oxygen annealing while 595 and 0.071 before
post annealing. The dielectric constant of BIT-SBTi lm approaches to that of the ceramics which
is around 100 at room temperature after oxygen annealing. This improvement of ferroelectrics is
mainly attributed to reduction of oxygen vacancies.p탾