Microstructure of spark plasma sintered silicon carbide with Al-B-C

다국어 초록 (Multilingual Abstract)

Densification of SiC powder with total amounts of 2, 4, 8 wt% Al-B-C additive was carried out by spark plasma sintering
(SPS). The unique features of the process are the possibilities of a very fast heating rate and a short soaking time to obtain
fully-dense materials. The heating rate and applied pressure were kept at 100 K·minute−1 and 40MPa, while the sintering
temperature and soaking time varied from 1,700-1,800 oC for 10-40 minutes, respectively. The SPS-sintered SiC at 1,800 oC
with different amounts of Al-B-C reached near-theoretical density. The sintered SiC ceramics were predominantly composed
of 6H polytype with 15R and 4H polytype as minor phases. The microstructure of SiC sintered up to 1,750 oC consisted of
equiaxed grains. In contrast, the growth of large elongated SiC grains in small matrix grains was shown in sintered bodies at
1800 oC, and a plate-like grains interlocking microstructure had been developed by increasing the soaking time at 1800 oC. The
grain growth rate decreases with increasing amounts of Al-B-C in SiC, however, the volume fraction and the aspect ratio of
large elongated SiC grains in the sintered bodies increased.

다국어 초록 (Multilingual Abstract)

Densification of SiC powder with total amounts of 2, 4, 8 wt% Al-B-C additive was carried out by spark plasma sintering
(SPS). The unique features of the process are the possibilities of a very fast heating rate and a short soaking time to obtain
fully-dense materials. The heating rate and applied pressure were kept at 100 K·minute−1 and 40MPa, while the sintering
temperature and soaking time varied from 1,700-1,800 oC for 10-40 minutes, respectively. The SPS-sintered SiC at 1,800 oC
with different amounts of Al-B-C reached near-theoretical density. The sintered SiC ceramics were predominantly composed
of 6H polytype with 15R and 4H polytype as minor phases. The microstructure of SiC sintered up to 1,750 oC consisted of
equiaxed grains. In contrast, the growth of large elongated SiC grains in small matrix grains was shown in sintered bodies at
1800 oC, and a plate-like grains interlocking microstructure had been developed by increasing the soaking time at 1800 oC. The
grain growth rate decreases with increasing amounts of Al-B-C in SiC, however, the volume fraction and the aspect ratio of
large elongated SiC grains in the sintered bodies increased.

참고문헌 (Reference)

1 L.J. Schioler, 64 : 268-294, 1986

2 S.K. Lee, 77 : 1655-1658, 1994

3 C.Greskovich, 59 : 336-343, 1978

4 W.L. Vaushn, 73 : 1540-1545, 1990

5 Y.W. Kim, 22 : 1031-1037, 2002

6 E.R. Maddrell, 6 : 486-488, 1987

7 W. Vanrijswjk, 73 : 148-149, 1990

8 R. Hamminger, 72 : 1741-1744, 1989

9 N.P. Padture, 77 : 519-523, 1994

10 M.A. Mulla, 29 : 934-938, 1994

11 Y.W. Kim, 103 : 257-261, 1995

12 M. Omori, 65 : C92-, 1982

13 Y.W. Kim, 80 : 99-105, 1997

14 S. Shinozaki, 64 : 1389-1393, 1985

15 J.J. Cao, 79 : 461-469, 1996

16 Y. Zhou, 14 : 3363-3369, 1999

17 D. Chen, 48 : 4599-4608, 2000

18 X.F. Zhang, 83 : 2813-2820, 2000

19 X.F. Zhang, 51 : 3849-3860, 2003

20 K.S. Cho, 287 : 329-334, 2005

21 M. Tokita, 30 : 790-804, 1993

22 N. Tamari, 103 : 740-742, 1995

23 D.S. Perera, 18 : 401-404, 1998

24 L. Gao, 19 : 609-613, 1999

25 Y. Zhou, 14 : 3363-3369, 1999

26 Y. Zhou, 83 : 654-656, 2000

27 E.M. Heian, 50 : 3331-3346, 2002

28 M. Ohyanagi, 50 : 111-114, 2004

29 U. Anselmi-Tamburini, 54 : 823-828, 2006

30 F. Guillard, 27 : 2725-2728, 2007

31 Y.W. Kim, 80 : 99-105, 1997

32 R.M. Williams, 64 : 1385-1389, 1985

33 S. Prochazk, "US Patent 3853566"

34 R.M. German, "Sintering Theory and Practice" John Wiley & Sons 225-, 1996

35 K. Yamad, "Silicon-Carbide Ceramics" Uchida Rokakuho Publishing Ltd. 9-, 1988

36 S. Shinozaki, "Silicon Carbide ’87" American Ceramic Society 113-, 1987

37 K. Suzuki, "Silicon Carbide Ceramics-2" Elsevier Applied Science 162-, 1991

38 W.J. Moberlychan, "High Performance Composites-Commonalty of Phenomena" TMS Publication 219-, 1994