Investigating Undoped HfO2 as Ferroelectric Oxide in Leaky and Non-Leaky FE–DE Heterostructure

다국어 초록 (Multilingual Abstract)

In this paper, we have investigated non-leaky and leaky FE–DE heterostructure with undoped HfO 2 and Zr doped HfO 2 as a ferroelectric material. Use of undoped HfO 2 in place of Zr doped HfO 2 as a ferroelectric material will ease the deposition process and simplify the processing steps, as ferroelectricity in undoped HfO 2 can be obtained without introduction of dopant elements. This replacement of ferroelectric oxide enhances the performance of heterostructure in terms of absolute voltage amplifi cation ( VD > VS ). Undoped HfO 2 provides higher magnitude voltage amplifi cation as compared to Zr doped HfO2 although the range to voltage amplifi cation is reduced.

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