RISS 검색 - 국내학술지논문 상세보기

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다국어 초록 (Multilingual Abstract)

Hybrid-type thin-film transistors were fabricated using amorphous oxide and colloidal quantum dots. To prevent damage to the quantum dots, amorphous SIZO, which can be processed at low temperatures, was deposited by RF sputtering. In the case of a general hybrid type device, it is known that the characteristics of a multilayer material are significantly lower than that of a single material, and this is greatly affected by the interface characteristics between each material. The electrical characteristics of a single SIZO TFT, such as threshold voltage, field-effect mobility, on/off current ratio, and subthreshold slope, have been observed as −0.15 V, 9.54 cm 2 /Vs, 2.9 × 10 8 , and 0.34 V/dec, respectively while electrical characteristics of hybrid-type OQO TFT were observed as 1.39 V, 9.19 cm 2 /Vs, 3.9 × 10 8 , and 0.35 V/dec, respectively. As a result, it was confirmed that the electrical characteristics did not change significantly when the single SIZO TFT and the hybrid type OQO TFT have been compared in this experiment. Its electrical properties are mainly driven by the upper and lower a-SIZO layers. a-SIZO which has amorphous properties, can provide excellent surface properties because it can completely cover the spherical QD when it comes into contact with the QD. These results are expected to be applicable to many important applications.

참고문헌 (Reference)

1 G. Konstantatos, 1 : 531-534, 2007

2 K. Nomura, 45 : 4303-, 2006

3 K. Kiu, 10 : 8604-8634, 2010

4 Y. Wang, 6 : 1900765-, 2019

5 J. Huang, 32 : 1906027-, 2020

6 J. Yao, 12 : 454-, 2020

7 Q. Xu, 7 : 1297-1303, 2020

8 S. Abbas, 303 : 111835-, 2020

9 M. V. Jarosz, 70 : 195327-, 2004

10 D. Kufer, 3 : 1324-1330, 2016

1 G. Konstantatos, 1 : 531-534, 2007

2 K. Nomura, 45 : 4303-, 2006

3 K. Kiu, 10 : 8604-8634, 2010

4 Y. Wang, 6 : 1900765-, 2019

5 J. Huang, 32 : 1906027-, 2020

6 J. Yao, 12 : 454-, 2020

7 Q. Xu, 7 : 1297-1303, 2020

8 S. Abbas, 303 : 111835-, 2020

9 M. V. Jarosz, 70 : 195327-, 2004

10 D. Kufer, 3 : 1324-1330, 2016

11 G. Konstantatos, 7 : 363-368, 2012

12 T. Nakotte, 10 : 172-, 2020

13 N. Huo, 30 : 1801164-, 2018

14 K. -S. Cho, 8 : 840-, 2017

15 K. Nomura, 432 : 488-, 2004

16 B. H. Lee, 9 : 19246-, 2019

17 J. S. Lee, 6 : 348-352, 2011

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학술지 이력

학술지 이력
연월일	이력구분	이력상세
2023	평가예정	해외DB학술지평가 신청대상 (해외등재 학술지 평가)
2020-01-01	평가	등재학술지 유지 (해외등재 학술지 평가)
2011-01-01	평가	등재학술지 유지 (등재유지)
2009-01-01	평가	등재학술지 유지 (등재유지)
2006-01-01	평가	등재학술지 선정 (등재후보2차)
2005-05-30	학회명변경	영문명 : 미등록 -> The Korean Institute of Electrical and Electronic Material Engineers
2005-05-30	학술지명변경	한글명 : Transactions on Electrical and Electroni -> Transactions on Electrical and Electronic Materials
2005-01-01	평가	등재후보 1차 PASS (등재후보1차)
2003-01-01	평가	등재후보학술지 선정 (신규평가)