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あぁかがさざただなはばぱまやゃらわゎんいぃきぎしじちぢにひびぴみりうぅくぐすずつづっぬふぶぷむゆゅるえぇけげせぜてでねへべぺめれおぉこごそぞとどのほぼぽもよょろを

アァカサザタダナハバパマヤャラワヮンイィキギシジチヂニヒビピミリウゥクグスズツヅッヌフブプムユュルエェケゲセゼテデヘベペメレオォコゴソゾトドノホボポモヨョロヲ ―

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RISS 인기검색어

터널링 특성을 이용한 새로운 구조의 실리콘 태양전지 = A new silicon solar cells using the tunneling dielectric material characteristics

한글로보기

https://www.riss.kr/link?id=A99589308

저자

김광호
발행기관
청주대학교
학술지명
산업과학연구(Journal of Industrial science researches)
권호사항

Vol.30 No.2 [2013]
발행연도
2013
작성언어
Korean
KDC
500
자료형태
학술저널
수록면

263-268(6쪽)
제공처
RISS
소장기관
- 청주대학교 중앙도서관
※ 대학의 dCollection(지식정보 디지털 유통체계)을 통하여 작성된 목록정보입니다.

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다국어 초록 (Multilingual Abstract)

A new structure of the silicon solar cells with the tunneling phenomenon through a very thin dielectric film was fabricated by screen printing method. From the I-V characteristics of the MIS capacitors with a 2 nm of thin film, electrons that were accumulated on the silicon surface were confirmed to pass by tunneling to the front electrode through the very thin Al2O3 film. A good C-V interface characteristic of the MIS capacitors was observed. Although the efficiency of the fabricated silicon solar cell with passivated tunneling Al2O3 film thickness of 2 nm was 3.15%, expected results are to be improved by the optimization of the solar cell processes parameters and cell design.

번역하기

A new structure of the silicon solar cells with the tunneling phenomenon through a very thin dielectric film was fabricated by screen printing method. From the I-V characteristics of the MIS capacitors with a 2 nm of thin film, electrons that were acc...

A new structure of the silicon solar cells with the tunneling phenomenon through a very thin dielectric film was fabricated by screen printing method. From the I-V characteristics of the MIS capacitors with a 2 nm of thin film, electrons that were accumulated on the silicon surface were confirmed to pass by tunneling to the front electrode through the very thin Al2O3 film. A good C-V interface characteristic of the MIS capacitors was observed. Although the efficiency of the fabricated silicon solar cell with passivated tunneling Al2O3 film thickness of 2 nm was 3.15%, expected results are to be improved by the optimization of the solar cell processes parameters and cell design.