Double Junction Characteristics of Amorphous TiO 2 Thin Film Due to Various Potential Barriers

다국어 초록 (Multilingual Abstract)

This report investigated the chemical, physical and electrical properties of TiO 2 that was prepared with various oxygen gas flows and annealing temperatures to create diff erent Schottky barriers. The thin fi lms of the Schottky contact with double barriers were observed as increments of the capacitance. The oxygen vacancy increased at the fi lm with the crystal structure and decreased at the fi lm with the amorphous structure. It was confi rmed that the current–voltage characteristics diff er when observed in the low current area because the formation of potential barrier varies depending on the condition of the interfacingeven in thin fi lms with similar amorphous characteristics. Because the size of the potential barrier is mostly small, current is not observed in areas high at μA level, but at nA level, the electrical properties of the potential barrier could be observed more closely by the eff ect of relatively large potential barriers. It was found that the single and double connections were made depending on the size of the potential barrier at Schottky contact according to the after annealing treatment temperature.

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