Graphene Field Effect Transistors

다국어 초록 (Multilingual Abstract)

In this paper, we present a simple technique for fabrication of graphene field effect transistor (FET) devices using photolithography and their electric transport characteristics. Our graphene devices show a clear metallic characteristic with device resistance of 11 ㏀ at room temperature. The linear I<SUB>DS</SUB> and V<SUB>DS</SUB> behavior indicated a good ohmic contact between Au contact pads and graphene channel. The I<SUB>DS</SUB> and V<SUB>GS</SUB> curve shows an ambipolar characteristics, both electron and hole conductions. The gate can cause either hole or electron conduction with the Dirac point, V<SUB>D</SUB>, (charge neutrality point) at V<SUB>GS</SUB> ~ 11.4 V. It can be seen from the right shift of the Dirac point that the device has been strongly p-doped.

목차 (Table of Contents)

• Abstract
• 1. Introduction
• 2. FET Device Fabrication
• 3. Results and Discussion
• 4. Conclusion
• Acknowledgements
• References