Cu(In<SUB>1-x</SUB>Ga<SUB>x</SUB>)Se<SUB>2</SUB> (CIGS) thin films were prepared using a single quaternary target by RF magnetron sputtering. The effects of deposition parameters on the structural, compositional and...
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https://www.riss.kr/link?id=A107660757
2013
-
학술저널
1320-1324(5쪽)
0
상세조회0
다운로드다국어 초록 (Multilingual Abstract)
Cu(In<SUB>1-x</SUB>Ga<SUB>x</SUB>)Se<SUB>2</SUB> (CIGS) thin films were prepared using a single quaternary target by RF magnetron sputtering. The effects of deposition parameters on the structural, compositional and...
Cu(In<SUB>1-x</SUB>Ga<SUB>x</SUB>)Se<SUB>2</SUB> (CIGS) thin films were prepared using a single quaternary target by RF magnetron sputtering. The effects of deposition parameters on the structural, compositional and electrical properties of the films were examined in order to develop the deposition process without post-deposition selenization. From X-ray diffraction analysis, as the substrate temperature and Ar pressure increased and RF power decreased, the crystallinity of the films improved. The scanning electron microscopy revealed that the grains became uniform and circular shape with columnar structure with increasing the substrate temperature and Ar pressure, and decreasing the RF power. The carrier concentration of CIGS films deposited at the substrate temperature of 500<SUP>o</SUP>C was 2.1x10<SUP>17</SUP>cm<SUP>-3</SUP> and the resistivity was 27Ωcm. At the substrate temperature above 500<SUP>o</SUP>C, In and Se contents in CIGS films decreased due to the evaporation and it led to the deterioration of crystallinity. It was confirmed that CIGS thin films deposited at optimal condition had similar atomic ratio to the target value even without post-deposition selenization process.