The TiNx thin films were prepared on glass substrate by RF(radio-frequency) magnetron sputtering apparatus from a Ti target in a gaseous mixture of argon and nitrogen. In deposition, a RF power supply was used as a power source with a constant power o...
The TiNx thin films were prepared on glass substrate by RF(radio-frequency) magnetron sputtering apparatus from a Ti target in a gaseous mixture of argon and nitrogen. In deposition, a RF power supply was used as a power source with a constant power of 240W, and the substrate was heated to 200℃. The films were obtained at nitrogen flow rates in the range 3-9 seem with a constant argon flow rate of 20 seem. For the films obtained, the chemical binding energy of the films was investigated by XPS (x-ray photoelectron spectroscopy) in order to analyze the chemical nature and composition of the films.