1 Hideya Kumomi, 516 : 1516-, 2008
2 I. Kim, 87 : 43509-, 2005
3 R. L. Hoffman, 82 : 733-, 2003
4 Kenji Nomura, 72 : 294-, 2004
5 Yeon-Keon Moon, 26 : 1472-, 2008
6 Rangaswamy Navamathavan, "Thin-Film Transistors Based on ZnO Fabricated by Using Radio-Frequency Magnetron Sputtering" 한국물리학회 48 (48): 271-274, 2006
7 Dieter K. Schroder, "Semiconductor Material and Device Characterization, 2nd ed" Wiley 1998
8 전재홍, "Effects of Gate Bias Stress on the Electrical Characteristics of ZnO Thin Film Transistor" 한국물리학회 53 (53): 412-415, 2008
1 Hideya Kumomi, 516 : 1516-, 2008
2 I. Kim, 87 : 43509-, 2005
3 R. L. Hoffman, 82 : 733-, 2003
4 Kenji Nomura, 72 : 294-, 2004
5 Yeon-Keon Moon, 26 : 1472-, 2008
6 Rangaswamy Navamathavan, "Thin-Film Transistors Based on ZnO Fabricated by Using Radio-Frequency Magnetron Sputtering" 한국물리학회 48 (48): 271-274, 2006
7 Dieter K. Schroder, "Semiconductor Material and Device Characterization, 2nd ed" Wiley 1998
8 전재홍, "Effects of Gate Bias Stress on the Electrical Characteristics of ZnO Thin Film Transistor" 한국물리학회 53 (53): 412-415, 2008