<P>Resistive switching memory, which is mostly based on polycrystalline thin films, suffers from wide distributions in switching parameters including set voltage, reset voltage, and resistance in their low- and high-resistance states. One of the...
http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
https://www.riss.kr/link?id=A107656582
2016
-
SCOPUS,SCIE
학술저널
7902-7911(10쪽)
0
상세조회0
다운로드다국어 초록 (Multilingual Abstract)
<P>Resistive switching memory, which is mostly based on polycrystalline thin films, suffers from wide distributions in switching parameters including set voltage, reset voltage, and resistance in their low- and high-resistance states. One of the...
<P>Resistive switching memory, which is mostly based on polycrystalline thin films, suffers from wide distributions in switching parameters including set voltage, reset voltage, and resistance in their low- and high-resistance states. One of the most commonly used methods to overcome this limitation is to introduce inhomogeneity. By contrast, in this paper, we obtained uniform resistive switching parameters and sufficiently low forming voltage by maximizing the uniformity of an epitaxial thin film. To achieve this result, we deposited an SrFeOx/SrRuO3 heteroepitaxial structure onto an SrTiO3 (001) substrate by pulsed laser deposition, and then we deposited an Au top electrode by electron-beam evaporation. This device exhibited excellent bipolar resistance switching characteristics, including a high on/off ratio, narrow distribution of key switching parameters, and long data retention time. We interpret these phenomena in terms of a local, reversible phase transformation in the SrFeOx film between brownmillerite and perovskite structures. Using the brownmillerite structure and atomically uniform thickness of the heteroepitaxial SrFeOx thin film, we overcame two major hurdles in the development of resistive random-access memory devices: high forming voltage and broad distributions of switching parameters.</P>