FED panel was successfully fabricated through the integration of a 0.7″ diagonal Si-based Mo-tip FEA with 25×25 pixels, Y₂O₃:Eu or ZnO:Zn phosphor screen, and vacuum sealing through an exhausting glass tube, including a getter. The panel system...
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https://www.riss.kr/link?id=A106427718
1999
English
학술저널
85-89(5쪽)
0
상세조회0
다운로드다국어 초록 (Multilingual Abstract)
FED panel was successfully fabricated through the integration of a 0.7″ diagonal Si-based Mo-tip FEA with 25×25 pixels, Y₂O₃:Eu or ZnO:Zn phosphor screen, and vacuum sealing through an exhausting glass tube, including a getter. The panel system...
FED panel was successfully fabricated through the integration of a 0.7″ diagonal Si-based Mo-tip FEA with 25×25 pixels, Y₂O₃:Eu or ZnO:Zn phosphor screen, and vacuum sealing through an exhausting glass tube, including a getter. The panel system was driven by an external driver circuit having pulse width modulation(PWM) driving scheme. Before character imaging, it was stabilized through tip aging by slowly increasing a pulse-mode emission current and phosphor aging by a coulombic charging process. After aging, luminescent characteristics such as emission uniformity, charging and arcing phenomena were shown to be improved significantly.
목차 (Table of Contents)
Electrical characteristics of lateral poly - silicon field emission triode using LOCOS process
Field emission of diamond films grown on glass substrates at low temperatures