The Pb(Zr_(0.52)Ti_(0.48))O₃ thin films were fabricated by sol-gel method on Pt/Ti/SiO₂/Si substrates. UV-photolysis process was added before final annealing of the coated films. The crystallinity, the chemical species, the surface morphology, the...
The Pb(Zr_(0.52)Ti_(0.48))O₃ thin films were fabricated by sol-gel method on Pt/Ti/SiO₂/Si substrates. UV-photolysis process was added before final annealing of the coated films. The crystallinity, the chemical species, the surface morphology, the surface roughness, and the interface states of the UV-processed PZT thin films were characterized using X-ray diffraction (XRD), Fourier transform infrared spectrometer (FT-IR), scanning electron microscope (SEM), atomic force microscope (AFM), and Auger electron spectroscopy (AES), respectively. The UV-photolysis processed PZT thin films exhibited enhanced ferroelectricity (P_(r)) and lower leakage current density than not-treated one. UV-photolysis process also made it possible to lower the crystallization temperature and to stabilize film surface and interface. The fatigue and retention test were also examined. It is thought that the UV-treatment process is very effective to enhance ferroelectric and electrical properties for the device application as ferroelectric random access memory.