RISS 학술연구정보서비스

검색
다국어 입력

http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.

변환된 중국어를 복사하여 사용하시면 됩니다.

예시)
  • 中文 을 입력하시려면 zhongwen을 입력하시고 space를누르시면됩니다.
  • 北京 을 입력하시려면 beijing을 입력하시고 space를 누르시면 됩니다.
닫기
    인기검색어 순위 펼치기

    RISS 인기검색어

      UV-광분해 과정에 의한 강유전체 Pb(Zr_(0.52)Ti_(0.48))O₃ 박막의 물성에 관한 연구 = A Study on the Physical Properties of ferroelectric the UV-photolysis processed Pb(Zr_(0.52)Ti_(0.48))O₃ thin films

      한글로보기

      https://www.riss.kr/link?id=T10274688

      • 0

        상세조회
      • 0

        다운로드
      서지정보 열기
      • 내보내기
      • 내책장담기
      • 공유하기
      • 오류접수

      부가정보

      다국어 초록 (Multilingual Abstract)

      The Pb(Zr_(0.52)Ti_(0.48))O₃ thin films were fabricated by sol-gel method on Pt/Ti/SiO₂/Si substrates. UV-photolysis process was added before final annealing of the coated films. The crystallinity, the chemical species, the surface morphology, the surface roughness, and the interface states of the UV-processed PZT thin films were characterized using X-ray diffraction (XRD), Fourier transform infrared spectrometer (FT-IR), scanning electron microscope (SEM), atomic force microscope (AFM), and Auger electron spectroscopy (AES), respectively. The UV-photolysis processed PZT thin films exhibited enhanced ferroelectricity (P_(r)) and lower leakage current density than not-treated one. UV-photolysis process also made it possible to lower the crystallization temperature and to stabilize film surface and interface. The fatigue and retention test were also examined. It is thought that the UV-treatment process is very effective to enhance ferroelectric and electrical properties for the device application as ferroelectric random access memory.
      번역하기

      The Pb(Zr_(0.52)Ti_(0.48))O₃ thin films were fabricated by sol-gel method on Pt/Ti/SiO₂/Si substrates. UV-photolysis process was added before final annealing of the coated films. The crystallinity, the chemical species, the surface morphology, the...

      The Pb(Zr_(0.52)Ti_(0.48))O₃ thin films were fabricated by sol-gel method on Pt/Ti/SiO₂/Si substrates. UV-photolysis process was added before final annealing of the coated films. The crystallinity, the chemical species, the surface morphology, the surface roughness, and the interface states of the UV-processed PZT thin films were characterized using X-ray diffraction (XRD), Fourier transform infrared spectrometer (FT-IR), scanning electron microscope (SEM), atomic force microscope (AFM), and Auger electron spectroscopy (AES), respectively. The UV-photolysis processed PZT thin films exhibited enhanced ferroelectricity (P_(r)) and lower leakage current density than not-treated one. UV-photolysis process also made it possible to lower the crystallization temperature and to stabilize film surface and interface. The fatigue and retention test were also examined. It is thought that the UV-treatment process is very effective to enhance ferroelectric and electrical properties for the device application as ferroelectric random access memory.

      더보기

      목차 (Table of Contents)

      • 목차
      • 목차 = ⅰ
      • 그림목차 = ⅲ
      • 표목차 = ⅴ
      • Ⅰ. 서론 = 1
      • 목차
      • 목차 = ⅰ
      • 그림목차 = ⅲ
      • 표목차 = ⅴ
      • Ⅰ. 서론 = 1
      • Ⅱ. 이론 = 4
      • 1. 강유전체 = 4
      • 2. Sol-gel 방법 = 11
      • 3. UV-광분해 = 14
      • 5. Interface states 와 Ferroelectricity = 15
      • 5. Interface states 와 ferroelectricity = 16
      • 6. Leakage current character = 17
      • Ⅲ. 실험 방법 = 22
      • 1. sol-gel process = 22
      • 2. Sample 제작 과정 = 27
      • 2-1. 기판 준비 = 27
      • 2-2. PZT 박막의 제조 = 27
      • 2-3. MFM 구조의 PZT 박막 축전기의 제조 = 30
      • Ⅳ. 결과 및 분석 = 31
      • 1. FT-IR분석 = 31
      • 2. PZT 박막의 구조 분석 = 35
      • 2-1. X-선 회절 분석 = 35
      • 2-2. 주사식 전자 현미경(scanning electron microscope : SEM) = 40
      • 2-3. 주사형 탐침 현미경(atomic force miroscope : AFM) = 44
      • 3. 박막의 전기적 특성 = 48
      • 3-1. 정전 용량-주파수 특성 (C-F) = 48
      • 3-2. 정전 용량-전압 특성 (C-V) = 52
      • 3-3. P-E 이력곡선 = 54
      • 3-4. 전류-전압 특성 측정 = 59
      • 3-5. Auger 전자 분광학 분석 (Auger electron spectroscopy : AES) = 61
      • Ⅴ. 결론 = 64
      • 참고문헌 = 67
      • Abstract = 70
      더보기

      분석정보

      View

      상세정보조회

      0

      Usage

      원문다운로드

      0

      대출신청

      0

      복사신청

      0

      EDDS신청

      0

      동일 주제 내 활용도 TOP

      더보기

      주제

      연도별 연구동향

      연도별 활용동향

      연관논문

      연구자 네트워크맵

      공동연구자 (7)

      유사연구자 (20) 활용도상위20명

      이 자료와 함께 이용한 RISS 자료

      나만을 위한 추천자료

      해외이동버튼