<P>We report the effects of postannealing on the photovoltaic performance of ITO/LZO/P3HT:ICBA/PEDOT:PSS: WO<SUB>x</SUB>/Al. The electrical characteristics of the PEDOT:PSS:WO<SUB>x</SUB> film can be controlled through an...
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https://www.riss.kr/link?id=A107482515
2015
-
SCOPUS,SCIE
학술저널
897-902(6쪽)
0
상세조회0
다운로드다국어 초록 (Multilingual Abstract)
<P>We report the effects of postannealing on the photovoltaic performance of ITO/LZO/P3HT:ICBA/PEDOT:PSS: WO<SUB>x</SUB>/Al. The electrical characteristics of the PEDOT:PSS:WO<SUB>x</SUB> film can be controlled through an...
<P>We report the effects of postannealing on the photovoltaic performance of ITO/LZO/P3HT:ICBA/PEDOT:PSS: WO<SUB>x</SUB>/Al. The electrical characteristics of the PEDOT:PSS:WO<SUB>x</SUB> film can be controlled through an annealing treatment, which exhibits a short-circuit current density of 9.37 mA/cm<SUP>2</SUP>, an open-circuit voltage of 0.86V, and a power conversion efficiency of 5.54% under AM1.5 illumination (100 mW/cm<SUP>2</SUP>). By annealing the device at 150°C, a favorable phase separation in the PEDOT:PSS:WO<SUB>x</SUB> is obtained, and the PCE increases by 23.27% compared with that of the nonannealed device. The V<SUB>oc</SUB> increases with the annealing temperature, and it is worth noting that the PEDOT:PSS device only experienced a 2.40% decrease in PCE after 150°C annealing treatment.</P>