기판온도에 의한 AZO 박막의 전기적 및 광학적 특성 변화 = Dependence of Electrical and Optical Properties on Substrate Temperatures of AZO Thin Films

다국어 초록 (Multilingual Abstract)

We prepared AZO (Al2O3:3wt%) thin films according to the substrate temperature using the pulsed laser deposition method and the structural, electrical, and optical properties of the thin films were investigated. The AZO thin film deposited at 400℃ showed the best (002) orientation and the FWHM was 0.38°. As a result of the investigation of electrical properties, it was confirmed that the carrier concentration and mobility increased and the resistivity decreased as the substrate temperature increased. The average transmittance in the visible light region showed a high value of 85% or more regardless of the substrate temperature. The Burstein-Moss effect, in which the carrier concentration would increase with increasing substrate temperature thereby widening the energy band gap, was also observed. The resistivity and the figure of merit of the AZO thin film deposited at a substrate temperature of 400℃ were 6.77×10-4Ω·cm and 1.02×104Ω-1·cm-1 respectively, showing the best value.