Si 선택적 성장을 위한 대형 CVD 반응기 내의열 및 유동해석 = Analysis on the flow and heat transfer in a large scale CVD reactor for Si epitaxial growth

다국어 초록 (Multilingual Abstract)

In this study, gas flow and temperature distribution in the multi-wafer planetary CVD reactor for the Si epitaxial growth were analyzed. Although the structure of the reactor was simplified as the first step of the study, the three-dimensional analysis was performed taking all these considerations of the revolution of the susceptor and the rotation of satellites into account. From the analyses, a reasonable velocity field and temperature field were obtained. However, it was found that analyses including the upper structure of the reactor were required in order to obtain more realistic temperature results. DCS mole fraction above the satellite surface and the susceptor surface without satellite was compared in order to check the gas species mixing. We found that satellite rotation helped gases to mix in the reactor.

참고문헌 (Reference)

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