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      KCI등재 SCIE SCOPUS

      Improved Device Ideality in Aged Organic Transistors

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      https://www.riss.kr/link?id=A106833302

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      다국어 초록 (Multilingual Abstract)

      The origin of ideality improvement in aged dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b]thiophene (DNTT) transistors is explored.
      High-performance plastic transistors exhibit nontrivial enhancements under ambient conditions, in the light of emergingparameterization scheme that elucidates the linearity of the transfer curves. Unintentional carrier doping in exceptionallystable DNTT molecules is suggested as the major driver of the recovery of an ideal state of the functional devices, thoroughlyinvestigated by analytical decoupling of the channel and contact potentials as well as numerical fi nite-element simulationon parametric interplays.
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      The origin of ideality improvement in aged dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b]thiophene (DNTT) transistors is explored. High-performance plastic transistors exhibit nontrivial enhancements under ambient conditions, in the light of emergingparame...

      The origin of ideality improvement in aged dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b]thiophene (DNTT) transistors is explored.
      High-performance plastic transistors exhibit nontrivial enhancements under ambient conditions, in the light of emergingparameterization scheme that elucidates the linearity of the transfer curves. Unintentional carrier doping in exceptionallystable DNTT molecules is suggested as the major driver of the recovery of an ideal state of the functional devices, thoroughlyinvestigated by analytical decoupling of the channel and contact potentials as well as numerical fi nite-element simulationon parametric interplays.

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      참고문헌 (Reference)

      1 Wang, S. D., "Understanding contact behavior in organic thin film transistors" 97 : 063307-, 2010

      2 Kim, C. -H., "Strongly correlated alignment of fluorinated 5,11-bis (triethylgermylethynyl)anthradithiophene crystallites in solution-processed field-effect transistors" 15 : 2913-2916, 2014

      3 Paterson, A. F., "Recent progress in high-mobility organic transistors: a reality check" 31 : 1801079-, 2018

      4 Kim, C. H., "Persistent photoexcitation effect on the poly(3-hexylthiophene) film: impedance measurement and modeling" 162 : 460-465, 2012

      5 Hasegawa, Y., "Overlapping of frontier orbitals in well-defined dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b]-thiophene and picene monolayers" 120 : 21536-21542, 2016

      6 de Mello, J., "Organic electronics: recent developments" 16 : 1099-1100, 2015

      7 Bittle, E. G., "Mobility overestimation due to gated contacts in organic field-effect transistors" 7 : 10908-, 2016

      8 Kim, C. -H., "Graphene–organic hybrid electronics" 5 : 4598-4613, 2017

      9 Jung, S., "Fundamental insights into the threshold characteristics of organic field-effect transistors" 48 : 035106-, 2015

      10 Kim, C. H., "Fundamental benefits of the staggered geometry for organic field-effect transistors" 32 : 1302-1304, 2011

      1 Wang, S. D., "Understanding contact behavior in organic thin film transistors" 97 : 063307-, 2010

      2 Kim, C. -H., "Strongly correlated alignment of fluorinated 5,11-bis (triethylgermylethynyl)anthradithiophene crystallites in solution-processed field-effect transistors" 15 : 2913-2916, 2014

      3 Paterson, A. F., "Recent progress in high-mobility organic transistors: a reality check" 31 : 1801079-, 2018

      4 Kim, C. H., "Persistent photoexcitation effect on the poly(3-hexylthiophene) film: impedance measurement and modeling" 162 : 460-465, 2012

      5 Hasegawa, Y., "Overlapping of frontier orbitals in well-defined dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b]-thiophene and picene monolayers" 120 : 21536-21542, 2016

      6 de Mello, J., "Organic electronics: recent developments" 16 : 1099-1100, 2015

      7 Bittle, E. G., "Mobility overestimation due to gated contacts in organic field-effect transistors" 7 : 10908-, 2016

      8 Kim, C. -H., "Graphene–organic hybrid electronics" 5 : 4598-4613, 2017

      9 Jung, S., "Fundamental insights into the threshold characteristics of organic field-effect transistors" 48 : 035106-, 2015

      10 Kim, C. H., "Fundamental benefits of the staggered geometry for organic field-effect transistors" 32 : 1302-1304, 2011

      11 Yamamoto, T., "Facile synthesis of highly π-extended heteroarenes, dinaphtho[2,3-b:2′,3′-f]chalcogenopheno[3,2-b]chalcogenophenes, and their application to field-effect transistors" 129 : 2224-2225, 2007

      12 Park, S. K., "Environmental and operational stability of solution-processed 6,13-bis(triisopropyl-silylethynyl) pentacene thin film transistors" 10 : 486-490, 2009

      13 Zschieschang, U., "Dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b]thiophene (DNTT) thin-film transistors with improved performance and stability" 12 : 1370-1375, 2011

      14 Liu, C., "Device physics of contact issues for the overestimation and underestimation of carrier mobility in field-effect transistors" 8 : 034020-, 2017

      15 Choi, H. H., "Critical assessment of charge mobility extraction in FETs" 17 : 2-7, 2017

      16 Chiarella, F., "Contact-resistance eff ects in PDI8-CN 2 n-type thin-fi lm transistors investigated by Kelvin-probe potentiometry" 28 : 299-305, 2016

      17 Kim, C. -H., "Compact DC modeling of organic field-effect transistors: review and perspectives" 61 : 278-287, 2014

      18 Bürgi, L., "Close look at charge carrier injection in polymer fi eld-eff ect transistors" 94 : 6129-6137, 2003

      19 Blülle, B., "Charge transport perpendicular to the high mobility plane in organic crystals:bandlike temperature dependence maintained despite hundredfold anisotropy" 93 : 035205-, 2016

      20 Natali, D., "Charge injection in solution-processed organic field-effect transistors: physics, models and characterization methods" 24 : 1357-1387, 2012

      21 Kim, C. H., "Capacitive behavior of pentacene-based diodes: quasistatic dielectric constant and dielectric strength" 109 : 083710-, 2011

      22 Kalb, W. L., "Calculating the trap density of states in organic field-effect transistors from experiment: a comparison of diff erent methods" 81 : 035327-, 2010

      23 Estrada, M., "Accurate modeling and parameter extraction method for organic TFTs" 49 : 1009-1016, 2005

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      학술지 이력

      학술지 이력
      연월일 이력구분 이력상세 등재구분
      학술지등록 한글명 : Electronic Materials Letters
      외국어명 : Electronic Materials Letters
      2023 평가예정 해외DB학술지평가 신청대상 (해외등재 학술지 평가)
      2020-01-01 평가 등재학술지 유지 (해외등재 학술지 평가) KCI등재
      2013-10-01 평가 등재학술지 선정 (기타) KCI등재
      2011-01-01 평가 등재후보학술지 유지 (기타) KCI등재후보
      2009-12-29 학회명변경 한글명 : 대한금속ㆍ재료학회 -> 대한금속·재료학회 KCI등재후보
      2008-01-01 평가 SCIE 등재 (신규평가) KCI등재후보
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      학술지 인용정보

      학술지 인용정보
      기준연도 WOS-KCI 통합IF(2년) KCIF(2년) KCIF(3년)
      2016 1.68 0.41 1.08
      KCIF(4년) KCIF(5년) 중심성지수(3년) 즉시성지수
      0.89 0.83 0.333 0.06
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