p-Pillar 영역의 두께와 농도에 따른 4H-SiC 기반 Superjunction Accumulation MOSFET 소자 구조의 최적화 = Optimization of 4H-SiC Superjunction Accumulation MOSFETs by Adjustment of the Thickness and Doping Level of the p-Pillar Region

다국어 초록 (Multilingual Abstract)

In this work, static characteristics of 4H-SiC SJ-ACCUFETs were obtained by adjusting the p-pillar region. The structure of this SJ-ACCUFET was designed by using a two-dimensional simulator. The static characteristics of SJ-ACCUFET, such as the breakdown voltages, on-resistance, and figure of merits, were obtained by varying the p-pillar doping concentration from $1{\times}10^{15}cm^{-3}$ to $5{\times}10^{16}cm^{-3}$ and the thickness from $0{\mu}m$ to $9{\mu}m$. The doping concentration and the thickness of p-pillar region are closely related to the break down voltage and on-resistance and threshold voltages. Hence a silicon carbide SJ-ACCUFET structure with highly intensified breakdown voltages and low on-resistances with good figure of merits can be achieved by optimizing the p-pillar thickness and doping concentration.

참고문헌 (Reference)

1 Z. D. Sha, 355 : 215-, 2007

2 P.M. Shenoy, "The planar 6H-SiC ACCUFET: a new high-voltage power MOSFET structure" Institute of Electrical and Electronics Engineers (IEEE) 18 (18): 589-591, 1997

3 Ji-Hong Kim, "Structural and optical properties of epitaxial ZnO thin films on 4H–SiC (0001) substrates prepared by pulsed laser deposition" Elsevier BV 489 (489): 179-182, 2010

4 B. J. Baliga, "Silicon Carbide Power Devices" World Scientific 2005

5 B. J. Baliga, "Power Semiconductor Devices" PWS-Kent 1995

6 R. Singh, "Development of high-current 4H-SiC ACCUFET" Institute of Electrical and Electronics Engineers (IEEE) 50 (50): 471-478, 2003

7 C. Codreanu, "Comparison of 3C–SiC, 6H–SiC and 4H–SiC MESFETs performances" Elsevier BV 3 (3): 137-142, 2000