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https://www.riss.kr/link?id=O43112541
Koveshnikov, S. ; Tsai, W. ; Zhang, M. ; Choi, C. ; Lee, J.
2005년
eng
0161-6374
2576-1579
학술저널
PROCEEDINGS- ELECTROCHEMICAL SOCIETY
274-281 [※수록면이 p5 이하이면, Review, Columns, Editor's Note, Abstract 등일 경우가 있습니다.]
1566774632
Advanced gate stack, source/drain and channel engineering for si-based CMOS: new materials, processes and equipment Session
Proceedings (Electrochemical Society)
Quebec City, Canada
2005; May
0
상세조회0
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Part I - Conventional Devices and Technology Options
Part II - Exploratory Devices and Approaches
Electrical Activation and Dopant Diffusion of Heavily Boron Implanted Silicon
Using Surface Chemistry for Defect Engineering in Ultrashallow Junction Formation