Effects of Annealing Temperature and Interfacial Oxide Thickness on Layer Exchange Metal-induced Crystallization

다국어 초록 (Multilingual Abstract)

In this paper, we investigated a layer exchange metal-induced crystallization (LE-MIC) process in detail for various thicknesses of the interfacial oxide (Al2O3: 0, 2, and 5 nm) at different annealing temperatures of 400 °C, 450 °C, 500 °C, and 550 °C, at which the metal-induced germanium melting (MIGM) process can occur. This MIGM mechanism, together with the LE-MIC process improved the quality of the Ge crystallites. Finally, we achieved fairly big (4 ∼ 5 µm) and (111)-oriented Ge crystal grains on a SiO2/Si substrate at 550 °C by combining the LE-MIC and the MIGM processes.

참고문헌 (Reference)

1 J-H. Park, 91 : 143107-, 2007

2 J. A. Hutchby, 35 : 9-, 1994

3 R. R. King, 90 : 183516-, 2007

4 J-H. Park, 106 : 074510-, 2009

5 S. Hu, 97 : 082104-, 2010

6 F. Liu, 39 : 1621-, 2004

7 M. Kurosawa, 95 : 132103-, 2009