Conduction Path Dependent Subthreshold Swing of Asymmetric Double Gate MOSFET

다국어 초록 (Multilingual Abstract)

The subthreshold swing and conduction path of asymmetric double gate(DG) MOSFET has been analyzed for channel thickness with a parameter of oxide thickness using Gaussian doping profiles in channel. The two dimensional analytical potential profile model of asymmetric DGMOSFET based on a summation of series has been used to derive the analytical subthreshold swing model. As a result to observe the relation of subthreshold swing and conduction path using this model, subthreshold swing depends on conduction path to change for top and bottom gate oxide thickness with channel length and thickness. We know the conduction path moves into gate contact biased with higher voltage, and subthreshold swing is greatly increased with movement of conduction path into bottom gate contact in the case of higher bottom gate voltage.

목차 (Table of Contents)

• Abstract
• I. INTRODUCTION
• II. THE ANALYTICAL SUBTHRESHOLD SWING MODEL FOR ASYMMETRIC DOUBLE GATE MOSFET
• III. RESULTS AND DISCUSSION FOR MOVEMENT OF SUBTHRESHOLD SWING OF ASYMMETRIC DOUBLE GATE MOSFET
• IV. CONCLUSIONS
• REFERENCES