Crystallographic structure and ferroelectricity of epitaxial hafnium oxide thin films

다국어 초록 (Multilingual Abstract)

Devices using silicon-based materials have been studied and developed by the semiconductor industry. With silicon-based materials reaching their performance limit, there have been attempts to develop and discover alternative materials. Recently, HfO 2 thin fi lms have been considered a candidate material because of their diverse characteristics and potential for applica- tion in future memory devices. High- k -gate dielectric-based HfO 2 thin fi lms can replace silicon-based gate oxide layers. Moreover, HfO 2 has been reported to possess ferroelectric properties in polycrystalline fi lms, as also seen in memory devices. Hence, it is important to analyze the phase, structure, and crystallinity of HfO 2 to confi rm its ferroelectric properties; how- ever, it has been challenging to do the same for pure HfO 2 thus far. HfO 2 thin fi lms are ferroelectric in their orthorhombic or rhombohedral phase. The epitaxial growth of HfO 2 thin fi lms makes it possible to analyze the properties of each phase. Following the fi rst report in 2015 on the epitaxial growth of HfO 2 fi lms, researchers have extensively studied their growth methods, structural and ferroelectric properties, phases, and application potential for future memory devices. This review summarizes the crystal structure, phases, deposition methods, and epitaxial growth mechanism of HfO 2 thin fi lms, as well as devices based on them. The fi ndings will aid in next-generation device research.

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