This paper presents an extensive analysis aimed at quantifying the impact of all the key technology parameters on the upward heat flow in state‐of‐the‐art InGaP/GaAs heterojunction bipolar transistors (HBTs) for various emitter areas and shapes....
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https://www.riss.kr/link?id=O119688358
2019년
-
0894-3370
1099-1204
SCI;SCIE;SCOPUS
학술저널
n/a-n/a [※수록면이 p5 이하이면, Review, Columns, Editor's Note, Abstract 등일 경우가 있습니다.]
0
상세조회0
다운로드다국어 초록 (Multilingual Abstract)
This paper presents an extensive analysis aimed at quantifying the impact of all the key technology parameters on the upward heat flow in state‐of‐the‐art InGaP/GaAs heterojunction bipolar transistors (HBTs) for various emitter areas and shapes....
This paper presents an extensive analysis aimed at quantifying the impact of all the key technology parameters on the upward heat flow in state‐of‐the‐art InGaP/GaAs heterojunction bipolar transistors (HBTs) for various emitter areas and shapes. Extremely accurate thermal simulations are conducted in a relatively short time with a tool relying on a commercial 3‐D finite‐element method (FEM) solver and an in‐house routine for automated geometry construction, optimized mesh generation, sequential solution, and data storing/processing. Design of Experiments is used to define a thermal resistance model as a function of the aforementioned parameters on the basis of a few FEM data.
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