<P>GaN nanotubular material is fabricated with an aluminium oxide membrane in MOCVD. SEM, XRD, TEM and PL are employed to characterize the fabricated GaN nanotubular material. An aluminium oxide membrane with ordered nanoholes is used as a templ...
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https://www.riss.kr/link?id=A107579442
2006
-
SCI,SCIE,SCOPUS
학술저널
54-59(6쪽)
0
상세조회0
다운로드다국어 초록 (Multilingual Abstract)
<P>GaN nanotubular material is fabricated with an aluminium oxide membrane in MOCVD. SEM, XRD, TEM and PL are employed to characterize the fabricated GaN nanotubular material. An aluminium oxide membrane with ordered nanoholes is used as a templ...
<P>GaN nanotubular material is fabricated with an aluminium oxide membrane in MOCVD. SEM, XRD, TEM and PL are employed to characterize the fabricated GaN nanotubular material. An aluminium oxide membrane with ordered nanoholes is used as a template. Gallium nitride is deposited at the inner wall of the nanoholes in the aluminium oxide template, and the nanotubular material with high aspect ratio is synthesized using the precursors of TMG and ammonia gas. Optimal synthesis conditions in MOCVD are obtained successfully for the gallium nitride nanotubular material in this research. The diameter of the GaN nanotube fabricated is approximately 200–250?nm and the wall thickness is about 40–50?nm. GaN nanotubular material consists of numerous fine GaN particulates with size range 15–30?nm. The composition of gallium nitride is confirmed to be stoichiometrically 1:1 for Ga and N by EDS. XRD and TEM analyses indicate that the grains in GaN nanotubular material have a nano-crystalline structure. No blue shift is found in the PL spectrum on the GaN nanotubular material fabricated in an aluminium oxide template.</P>
Fabrication and photoluminescence of ZnO hierarchical nanostructures containing Bi2O3