Design of NAND Flash Memory Device by the Fringing Field from a Control Gate

다국어 초록 (Multilingual Abstract)

We propose a cell structure with non-overlap source/drain (S/D) (or without S/D) for a NAND flash memory, which utilizes the fringing field from control gates. In this work, a guideline for the cell device design is suggested through extensive device simulations. We considered a cell string with conventional SONOS cell transistors that have a nitride storage node on a planar channel structure. The read operation of an erased cell in the proposed cell string was successful, which is an important issue for a device using a fringing field. We think that our proposed structure is a promising candidate to improve scalability for sub-40 nm NAND flash memory because the proposed devices show better characteristics with scaling down.

참고문헌 (Reference)

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