Parameterization of the dielectric functions of InGaSb alloys

다국어 초록 (Multilingual Abstract)

Analytic expressions are presented that accurately represent the dielectric functions ε ¼ ε1 þ iε2 of In1xGaxSb from 1.5 to 6 eV. We used the parametric model, which portrays ε as a sum of polynomials and can accommodate the asymmetric nature of critical point transitions. The ε spectra were obtained previously by spectroscopic ellipsometry for x ¼ 0.000, 0.102, 0.305, 0.473, 0.684, and 1.000.
The ε data are successfully reconstructed and parameterized by eight polynomials. With the interpolation of parameters of ε spectra, we can determine ε as a continuous function of Ga composition and energy over the entire composition range 0 x 1. These results should be useful for device design and in situ monitoring of deposition.

참고문헌 (Reference)

1 K. Takei, 12 : 2060-2066, 2012

2 T. F. Refaat, 43 : 1014-1015, 2004

3 S. Imai, 32 : 3860-3865, 1993

4 T. J. Kim, 102 : 102109-, 2013

5 D. E. Aspnes, 27 : 985-1009, 1983

6 B. Johs, 313 : 137-142, 1998

7 T. J. Kim, 112 : 013505-, 2012

8 Y.S. Ihn, 455 : 222-227, 2004

9 T. J. Kim, 68 : 115323-, 2003

10 "WVASE32" J.A. Woollam Co., Inc., USA

11 C.M. Herzinger, "U.S. Patent No. 5,796,983"

12 M. Cardona, "Modulation Spectroscopy" Academic Press 9-23, 1969