Abstract
In this paper, the difference of conductivities on Ge-Si-Te memory devices are investigated experimentally by making use of samples which are prepared with material of high purities Te(99.999%) and low purities Te (99.99%).
By X-ray diffr...
Abstract
In this paper, the difference of conductivities on Ge-Si-Te memory devices are investigated experimentally by making use of samples which are prepared with material of high purities Te(99.999%) and low purities Te (99.99%).
By X-ray diffraction analysis and microscope, samples are proven to be plasses.
Conductivities of samples are measured at temperature between 300˚K and 500˚K.
At room temperrature, the dependence of frequency is investigated at the range between 50Hz and 200 Hz.
As results by heat treaed method dc conductivities of heat treated samples are 101-102 orders higher than untreated samples and frequency dependence of ac conductivities are approximately same.