We propose a simple taper angle control technique which can be easily achieved by using conventional thin-film deposition and wet etching processes. Based on the proposed technique, the taper angle can be controlled below 30<SUP>o</SUP> by...
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https://www.riss.kr/link?id=A107539491
2014
-
SCOPUS,SCIE
학술저널
187-193(7쪽)
0
상세조회0
다운로드다국어 초록 (Multilingual Abstract)
We propose a simple taper angle control technique which can be easily achieved by using conventional thin-film deposition and wet etching processes. Based on the proposed technique, the taper angle can be controlled below 30<SUP>o</SUP> by...
We propose a simple taper angle control technique which can be easily achieved by using conventional thin-film deposition and wet etching processes. Based on the proposed technique, the taper angle can be controlled below 30<SUP>o</SUP> by varying the thickness of the shade layer which will support the top layer by means of the thin-film stiction phenomenon. By applying the proposed technique to the thin-film line resistor structure, we can confirm that variations of the resistance and the heat generation of the thin-film line formed cross the shade structured multiple thin-film line bumps can be suppressed below 6%, while those of the line resistor formed over multiple line bumps without the shade layer are increased by 54.5% and 246.6%, respectively.
Ge surface-energy-driven secondary grain growth via two-step annealing