<P>We investigate peculiar dopant deactivation behaviors of Si nanostrucures with first principle calculations and reveal that surface dangling bonds (SDBs) on Si nanostructures could be fundamental obstacles in nanoscale doping. In contrast to ...
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https://www.riss.kr/link?id=A107722717
2010
-
SCOPUS,SCIE
학술저널
1671-1676(6쪽)
0
상세조회0
다운로드다국어 초록 (Multilingual Abstract)
<P>We investigate peculiar dopant deactivation behaviors of Si nanostrucures with first principle calculations and reveal that surface dangling bonds (SDBs) on Si nanostructures could be fundamental obstacles in nanoscale doping. In contrast to ...
<P>We investigate peculiar dopant deactivation behaviors of Si nanostrucures with first principle calculations and reveal that surface dangling bonds (SDBs) on Si nanostructures could be fundamental obstacles in nanoscale doping. In contrast to bulk Si, as the size of Si becomes smaller, SDBs on Si nanostructures prefer to be charged and asymmetrically deactivate n- and p-type doping. The asymmetric dopant deactivation in Si nanostructures is ascribed to the preference for negatively charged SDBs as a result of a larger quantum confinement effect on the conduction band. On the basis of our results, we show that the control of the growth direction of silicon nanowire as well as surface passivation is very important in preventing dopant deactivation.</P><P><B>Graphic Abstract</B>
<IMG SRC='http://pubs.acs.org/appl/literatum/publisher/achs/journals/content/nalefd/2010/nalefd.2010.10.issue-5/nl904282v/production/images/medium/nl-2009-04282v_0001.gif'></P><P><A href='http://pubs.acs.org/doi/suppl/10.1021/nl904282v'>ACS Electronic Supporting Info</A></P>