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Cu Damascene Process:Status and Challenges in Electrochemical Aspects
Akahoshi, H. ESJ, 2004 p.6-9
Photo-enhanced Electrochemical Mechanical Polishing for Cu Damascene
Yano, H.; Matsui, Y.; Minamihaba, G.; Tateyama, Y. ESJ, 2004 p.10-13
High Reliability Cu Interconnection Utilizing a Low Contamination CoWP Capping Layer
Ishigami, T.; Kurokawa, T.; Kakuhara, Y.; Withers, B.; Jacobs, J.; Kolics, A.; Ivanov, I.; Sekine, M.; Ueno, K. ESJ, 2004 p.14-17
Formation of Diffusion Barrier Layer for ULSI Cu Interconnection Using a Wet Process
Yoshino, M.; Yokoshima, T.; Masuda, T.; Sasano, J.; Matsuda, I.; Osaka, T. ESJ, 2004 p.18-21
Evaluation of Wafer Back Grinding Damage Using Photoluminescence
Watanabe, M.; Tanaka, M. ESJ, 2004 p.22-25
Ultra-high-density Packaging by Three-dimensional Packaging Technology
Takahashi, K. ESJ, 2004 p.26-29
Highly Reliable Cu/Low-k Dual Damascene Interconnect Technology for 65nm Node
Ito, F.; Ueki, M.; Narihiro, M.; Ohtake, H.; Tagami, M.; Tada, M.; Abe, M.; Inoue, N.; Arai, K.; Takeuchi, T. ESJ, 2004 p.30-33
Properties of a Tantalum Nitride Source Ta(N-t-C5H11)[N(CH3)2]3 for MOCVD
Yasuhara, S.; Okuhara, Y.; Kadokura, H. ESJ, 2004 p.34-37
Itoh, H.; Shimokawa, K.; Sekiyama, S.; Yanazawa, H. ESJ, 2004 p.38-41
Kanamura, R.; Ohoka, Y.; Fukasawa, M.; Tabuchi, K.; Nagahata, K.; Shibuki, S.; Muramatsu, M.; Miyajima, H.; Usui, T.; Kajita, A. ESJ, 2004 p.42-45