Large-Bandgap Bowing of InxAl1-xN Ternary Films Grown by Using Metalorganic Chemical Vapor Deposition

다국어 초록 (Multilingual Abstract)

InxAl1-xN ternary lms were grown on GaN/sapphire (0001) templates by using metalorganic chemical vapor deposition (MOCVD) with a In molar fraction in the range of 0.08 ≤ x ≤ 0.22. in Al-rich region. The In molar fraction x was controlled by using the MOCVD growth temperature and pressure. The optical bandgap energies and In molar fractions of InxAl1-xN ternary films were
estimated by using high resolution X-ray diffraction and optical reflectance measurements. Our experimental results showed that the InxAl1-xN bandgap energies depended on In molar fraction with a large bowing parameter of 5.3 0.3 eV and that this value was larger than those predicted by using theoretical first-principles calculations. The spatial emission distribution of the InxAl1-xN ternary film was also investigated using cathodo-luminescence measurement at room temperature and showed an emission fluctuation that was possibly due to In segregation.

참고문헌 (Reference)

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