<P>Through-Si-via (TSV) filling with electrodeposited Cu was performed with a pulse current consisting of very a short duty cycle to achieve 3D interconnection in high density integrated circuit (IC) devices. Low frequency was unacceptable in th...
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https://www.riss.kr/link?id=A107670100
2013
-
SCOPUS,SCIE
학술저널
3300-3305(6쪽)
0
상세조회0
다운로드다국어 초록 (Multilingual Abstract)
<P>Through-Si-via (TSV) filling with electrodeposited Cu was performed with a pulse current consisting of very a short duty cycle to achieve 3D interconnection in high density integrated circuit (IC) devices. Low frequency was unacceptable in th...
<P>Through-Si-via (TSV) filling with electrodeposited Cu was performed with a pulse current consisting of very a short duty cycle to achieve 3D interconnection in high density integrated circuit (IC) devices. Low frequency was unacceptable in this condition, because a highly acidic electrolyte attacked the seed layer and Cu deposit obtained with low current efficiency during comparably longer off time period. An increased frequency critically enhanced the filling rate of Cu, which was mainly related to the improvement of the current efficiency and lower dissolution rate. In pulse conditions, high density nanoscale twin structure and strain fields were observed, which were caused by induced stress during the on-time because of high peak current density. Application of pulse deposition reduced thermal extrusion of Cu that was related to the imperfect microstructure of the deposited Cu.</P>
Direct Electrodeposition of Cu on Ru-Al2O3 Layer