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https://www.riss.kr/link?id=O42873734
Tsai, W. ; Maes, J. W. ; De Witte, H. ; Chen, J. ; Delabie, A. ; Carter, R. ; Richard, O. ; Caymax, M. ; Conrad, T. ; Young, E.
2003년
eng
0161-6374
2576-1579
학술저널
PROCEEDINGS- ELECTROCHEMICAL SOCIETY PV
37-46 [※수록면이 p5 이하이면, Review, Columns, Editor's Note, Abstract 등일 경우가 있습니다.]
1566774055 (cased)
High dielectric constant materials: materials science, processing, reliability, and manufacturing issues; Physics and technology of high-k gate dielectrics II
2nd:; International Symposium
Orlando, FL
2003; Oct
0
상세조회0
다운로드
Tailoring High-K/Silicon Interface for Nanoelectronics Applications
Method for Determining the Effectiveness of Silicon Nitride as a Barrier Layer for HfO~2