Sb<sub>2</sub>Se<sub>3</sub> is a typical V<sub>2</sub>-VI<sub>4</sub> binary chalcogenide with single phase and fixed composition and recently attracting many interests from many photovoltaic researcher...
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https://www.riss.kr/link?id=A106541789
2019
-
500
학술저널
379-379(1쪽)
0
상세조회0
다운로드다국어 초록 (Multilingual Abstract)
Sb<sub>2</sub>Se<sub>3</sub> is a typical V<sub>2</sub>-VI<sub>4</sub> binary chalcogenide with single phase and fixed composition and recently attracting many interests from many photovoltaic researcher...
Sb<sub>2</sub>Se<sub>3</sub> is a typical V<sub>2</sub>-VI<sub>4</sub> binary chalcogenide with single phase and fixed composition and recently attracting many interests from many photovoltaic researchers because of its high absorption coefficient, low-cost. In the case of Sb<sub>2</sub>Se<sub>3</sub> solar cells, interfacial engineering of a Sb<sub>2</sub>Se<sub>3</sub> light absorber layer and other component layers such as a metal electrode and an electron transport layer is an important factor to enhance photovoltaic performance of Sb<sub>2</sub>Se<sub>3</sub> solar cells. In this study, we have tried to apply a conformal amorphous ALD TiO<sub>2</sub> thin film as an interfacial protection layer for Sb<sub>2</sub>Se<sub>3</sub> solar cells. Uniformly deposited amorphous ALD TiO<sub>2</sub> thin films were applied to the Sb<sub>2</sub>Se<sub>3</sub> solar cells with the structure of Mo/Sb2Se3/ALD TiO<sub>2</sub>/CdS/ZnO/AZO/Al and we have investigated the possibility of the ALD TiO<sub>2</sub> thin film as an absorber protection layer. This work was supported by the DGIST R&D Programs of the Ministry of Science, ICT & Future Planning of Korea (19-BD-05).
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