Electrical Characteristics of the Resonant-Cavity Separate Absorption, Charge, and Multiplication Avalanche Photodetector Improved by Device Optimization

다국어 초록 (Multilingual Abstract)

We report on the electrical characteristics of the InAs self-assembled quantum dots (SA-QDs) resonant-cavity separate absorption, charge, and multiplication avalanche photodetector (RC-SACM APD) improved by optimizing the layer parameters, such as the anti-node position of an incident optical standing wave of the InAs QDs as an light-absorbing layer, the doping concentration of the Al$_{0.2}$Ga$_{0.8}$As charge layer (N$_{a}$ = 1 $\times$ 10$^{18}$/cm$^{3}$), and the layer thickness calibrated by using Bragg's quarter-wavelength rule. The optimized InAs QDs RC-SACM APD exhibited very low dark current of 163 pA, a high photocurrent of 66 nA, and a very low breakdown voltage of --12.3 V. In addition, the avalanche multiplication gain was remarkably increased up to 1648.