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https://www.riss.kr/link?id=O36513494
1998년
eng
0026-2714
1872-941X
SCI;SCIE;SCOPUS
학술저널
MICROELECTRONICS RELIABILITY
227-234 [※수록면이 p5 이하이면, Review, Columns, Editor's Note, Abstract 등일 경우가 있습니다.]
Dielectrics in microelectronics
Workshop
Toulouse; France
1998; Mar
0
상세조회0
다운로드
Switching events in the soft breakdown /-t characteristic of ultra-thin SiO~2 layers
Experimental study of the quasi-breakdown failure mechanism in 4.5 nm-thick SiO~2 oxides
Electric breakdowns and breakdown mechanisms in ultra-thin silicon oxides
Gate oxide reliability improvement related to dry local oxidation of silicon