차폐형 게이트 구조를 갖는 전력 MOSFET의 전기적 특성 분석에 관한 연구 = Analysis of Electrical Characteristics of Shield Gate Power MOSFET for Low on Resistance

다국어 초록 (Multilingual Abstract)

This research was about shielded trench gate power MOSFET for low voltage and high speed. We used T-CAD tool and carried out process and device simulation for exracting design and process parameters. The exracted parameters was used to design shieled and conventional trench gate power MOSFET. And The electrical characteristics of shieled and conventional trench gate power MOSFET were compared and analyzed for their power device applications. As a result of analyzing electrical characteristics, the recorded breakdown voltages of both devices were around 120 V. The electric distributions of shielded and conventional trench gate power MOSFET was different. But due to the low voltage level, the breakdown voltage was almost same. And the other hand, the threshold voltage characteristics of shielded trench gate power MOSFET was superior to convention trench gate power MOSFET. In terms of on resistance characteristics, we obtained optimal oxied thickness of $3{\mu}m$.

참고문헌 (Reference)

1 H. S. Lee, 7 : 2006

2 경신수, "고전압 전력소자를 보호하기 위한 Sense FET 설계방법" 한국전기전자재료학회 22 (22): 12-16, 2009

3 E. Gates, "Introduction to Electronics" Cengage Learning 2001

4 W. H. Hayt. Jr., "Eng Ineer Ingelect Romagnetics-7/E" Mc Graw-Hill 2005

5 A. Malvino, "Electronic Principles" McGraw-Hill College 2006

6 남태진, "Al₂O₃ 게이트 절연막을 이용한 GaN Power MOSFET의 설계에 관한 연구" 한국전기전자재료학회 24 (24): 713-717, 2011

7 undefined, "A Novel Lateral Trench Electrode IGBT for Suprior Electrical Characteristics" The Korean Institute of Electrical and Electronic Material Engineers 15 (15): 758-763, 2002