Liquid Crystal-Gated-Organic Field-Effect Transistors with In-Plane Drain–Source–Gate Electrode Structure

다국어 초록 (Multilingual Abstract)

<P>We report planar liquid crystal-gated-organic field-effect transistors (LC-<I>g</I>-OFETs) with a simple in-plane drain–source–gate electrode structure, which can be cost-effectively prepared by typical photolithography/etching processes. The LC-<I>g</I>-OFET devices were fabricated by forming the LC layer (4-cyano-4′-pentylbiphenyl, 5CB) on top of the channel layer (poly(3-hexylthiophene), P3HT) that was spin-coated on the patterned indium–tin oxide (ITO)-coated glass substrates. The LC-<I>g</I>-OFET devices showed p-type transistor characteristics, while a current saturation behavior in the output curves was achieved for the 50–150 nm-thick P3HT (channel) layers. A prospective on/off ratio (>1 × 10<SUP>3</SUP>) was obtained regardless of the P3HT thickness, whereas the resulting hole mobility (0.5–1.1 cm<SUP>2</SUP>/(V s)) at a linear regime was dependent on the P3HT thickness. The tilted ordering of 5CB at the LC-P3HT interfaces, which is induced by the gate electric field, has been proposed as a core point of working mechanism for the present LC-<I>g</I>-OFETs.</P><P><B>Graphic Abstract</B>
<IMG SRC='http://pubs.acs.org/appl/literatum/publisher/achs/journals/content/aamick/2015/aamick.2015.7.issue-1/am506609s/production/images/medium/am-2014-06609s_0004.gif'></P><P><A href='http://pubs.acs.org/doi/suppl/10.1021/am506609s'>ACS Electronic Supporting Info</A></P>