High selective etching process precision control is required in semiconductor devices. Perfluorocarbon compounds have intrinsic global warming issue. In this work, reactive ion etching process was conducted for SiO<sub>2</sub> and a-C in a...
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https://www.riss.kr/link?id=A107409028
2021
English
420
학술저널
132-132(1쪽)
0
상세조회0
다운로드다국어 초록 (Multilingual Abstract)
High selective etching process precision control is required in semiconductor devices. Perfluorocarbon compounds have intrinsic global warming issue. In this work, reactive ion etching process was conducted for SiO<sub>2</sub> and a-C in a...
High selective etching process precision control is required in semiconductor devices. Perfluorocarbon compounds have intrinsic global warming issue. In this work, reactive ion etching process was conducted for SiO<sub>2</sub> and a-C in a dual frequency superimposed capacitively coupled plasmas (DFS-CCPs) reactor with C<sub>4</sub>H<sub>3</sub>F<sub>7</sub>O ether and alcohol plasmas. The etch rate and radical density showed that ether was higher than alcohol. Selectivity was superior when the low frequency power ratio was higher than high frequency power ratio.
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