Al-B-C 첨가 탄화규소의 스파크 플라즈마 소결에 의한 미세구조 발달 = Microstructure Development of Spark Plasma Sintered Silicon Carbide with Al-B-C

다국어 초록 (Multilingual Abstract)

Densification of SiC powder with additives of total amount of2, 4, 8 $wt\%$ Al-B-C was carried out by Spark Plasma Sintering (SPS). The unique features of the process are the possibilities of a very fast heating rate and a short holding time to obtain fully dense materials. The heating rate and applied pressure were kept at $100^{\circ}C/min$ and 40 MPa, while the sintering temperature and holding time varied from 1700 - $1800^{\circ}C$ for 10 - 40 min, respectively. The SPS-sintered specimens with different amount of Al-B-C at $1800^{\circ}C$ reached near-theoretical density. The $3C{\rightarrow}6H,\;15R{\rightarrow}4H$ phase transformation of SiC was enhanced by increasing the additive amount. The microstructure of SiC sintered up to $1750^{\circ}C$ consisted of fine equiaxed grains. In contrast, the growth of large elongated grains in small matrix grains was shown in sintered bodies at $1800^{\circ}C$, and the plate-like grains interlocking microstructure had been developed by increasing the holding time at $1800^{\circ}C$. The grain growth rate decreases with increasing amount of Al-B-C in SiC starting powder, however, the both of volume fraction and aspect ratio of large grains in sintered body increased.