Effect of Aluminum Doping on a Solution-Processed Zinc-Tin-Oxide Thin-Film Transistor

다국어 초록 (Multilingual Abstract)

The doping effect of aluminum (Al) on a solution-processed zinc-tin-oxide (Al-ZTO) film was examined.
The solution processing temperature and aluminum doping concentration were optimized. The following optimal electrical properties with 0.0025 M Al doping at a processing temperature of 500°C were obtained;a mobility of 5.41 cm2/Vs, a current ratio of Ion/Ioff of 107, a threshold voltage of 2.46 V, and a subthreshold slope of 0.48 V/dec with better bias stability. Al doping into the ZTO TFTs improved the electrical properties and bias stability due to the control of free charge carriers without suppressive atoms.

참고문헌 (Reference)

1 J. F. Wager, 300 : 1245-, 2003

2 T. Minami, 111 : 176-, 1984

3 Y. Chang, 10 : H135-, 2007

4 J. F. Wager, 86 : 013503-, 2005

5 S. W. Lee, 95 : 132101-, 2009

6 M. Matters, 102 : 998-, 1999

7 D. H. Cho, 93 : 142111-, 2008

8 J. K. Jeong, 95 : 123505-, 2009

9 S. Bethke, 52 : 138-, 1988

10 Y. Hwang, 25 : 695-, 2010

11 S.-J. Seo, 42 : 035106-, 2009

12 K. Satoh, 516 : 5814-, 2008

13 R . Shanon, A32 : 751-, 1976

14 Y. Jeong, 2 : 611-, 2011

15 Young-Jin Kwack, "Solution-Processed Zinc-Tin-Oxide Thin-Film Transistor by Electrohydrodynamic Spray" 대한금속·재료학회 8 (8): 341-344, 2012

16 최운섭, "Preparation of Zinc-tin-oxide Thin Film by Using an Atomic Layer Deposition Methodology" 한국물리학회 57 (57): 1472-1476, 2010

17 이준석, "Inkjet-processed Zinc-tin-oxide Thin-film Transistor with a MoO3 Interlayer and Its Stability" 한국물리학회 61 (61): 769-772, 2012