MM-wave InP-based HBT Technology with Carbon-doped Base

다국어 초록 (Multilingual Abstract)

The fast high-speed operation of an InP/Ino_(0.53)Ga_(0.47)As heterojunction hipolar transistor (HBT) utilizing corbon as the p-type basc dopant is reported. A base carrier concentration of 7x10^(19)/㎤ was achieved by chemical beam epitaxy (CBE). To our knowledge, this is the highest doping level reported using carbon. HBTs with two 1.5㎛ x 15㎛² emitter fingers showed a do current gain of l4. The f_t and f_(max) of the transistors were 115 GHz and 51 GHz, respectively, at I_C=60 mA and V_(CE)=2.0 V. These results indicate the significant potential of highly carbondoped base InP/InCaAs HBTs for millimeter-wave applications.