TiO2 films were deposited on a glass substrate with RF magnetron sputtering and then surface of TiO2 films were electron beam irradiated in a vacuum condition to investigate the effect of electron bombardment on the thin film crystallization, surface ...
TiO2 films were deposited on a glass substrate with RF magnetron sputtering and then surface of TiO2 films were electron beam irradiated in a vacuum condition to investigate the effect of electron bombardment on the thin film crystallization, surface roughness and gas sensitivity for hydrogen. TiO2 films that electron beam irradiated at 450eV were amorphous phase, while the films irradiated at 900eV show the anatase (101) diffraction peak in XRD pattern. AFM measurements show that the roughness is depend on the electron irradiation energy. As increase the hydrogen gas concentration and operation temperature, the gas sensitivity of TiO2 and TiO2/ZnO films is increased proportionally and TiO2 films that electron beam irradiated at 900eV show the higher sensitivity than the films were irradiated at 450eV. From the XRD pattern and AFM observation, it is supposed that the crystallization and rough surface promote the hydrogen gas sensitivity of TiO2 films. (Received November 5, 2010; Revised December 13, 2010; Accepted January 3, 2011)