Chemical vapor deposition of Cu from Cu(Ⅱ)〔Cu(hfa)2〕on pre-deposited gold of different thickness on a Si(100) substrate has been studied to determine the film growth and the interdiffusion behavior at the interface. The surface morphology change...
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다국어 초록 (Multilingual Abstract)
Chemical vapor deposition of Cu from Cu(Ⅱ)〔Cu(hfa)2〕on pre-deposited gold of different thickness on a Si(100) substrate has been studied to determine the film growth and the interdiffusion behavior at the interface. The surface morphology change...
Chemical vapor deposition of Cu from Cu(Ⅱ)〔Cu(hfa)2〕on pre-deposited gold of different thickness on a Si(100) substrate has been studied to determine the film growth and the interdiffusion behavior at the interface. The surface morphology changes of pre-deposited 30A°thick Au film were observed during heat treatment under hydrogen; uniform close packed Au film change into agglomerated island formations on the surface leading to discontinuities covering only 20% of the overall Si surface. When pre-deposited 1500A°thick Au film was used as a substrate, the film at the interface was Cu-Au compound instead of a pure Au as a result of strong interdiffusion at the interface between Au and Cu layers. The microstructural difference owing to the increase in Au film thickness is considered to the result of stress relaxation induced by the difference of the thermal expansion coefficients between Au film and Si substrate during the Cu film deposition.
Development of Waste Plastics-Based RDF and Its Combustion Properties
활성탄 제조를 위한 폐목재의 최적 탄화조건에 관한 연구