RISS 학술연구정보서비스

검색
다국어 입력

http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.

변환된 중국어를 복사하여 사용하시면 됩니다.

예시)
  • 中文 을 입력하시려면 zhongwen을 입력하시고 space를누르시면됩니다.
  • 北京 을 입력하시려면 beijing을 입력하시고 space를 누르시면 됩니다.
닫기
    인기검색어 순위 펼치기

    RISS 인기검색어

      KCI등재 SCI SCIE SCOPUS

      Characterization of the Property Degradation of PZT Thin Films with Thickness

      한글로보기

      https://www.riss.kr/link?id=A104108250

      • 0

        상세조회
      • 0

        다운로드
      서지정보 열기
      • 내보내기
      • 내책장담기
      • 공유하기
      • 오류접수

      부가정보

      다국어 초록 (Multilingual Abstract)

      The property degradation of lead zirconate titanate (PZT) thin films with thickness was investigated. PZT thin films were fabricated under the optimum established conditions. PZT thin films with a thickness of less than 30 nm did not show the perovskite phase. When considering the thickness of the reacted layer between the PZT thin film and the Pt bottom electrode of about 10 nm in thickness, a thickness of 30 nm was considerable compared to the critical thickness (18 nm) over which PZT shows ferroelectricity. The degree of (001) orientation increased as the thickness increased due to the competition between the effect of the surface energy and that of the lattice mismatch with Pt(111). The degradation of the ferroelectricity with increasing PZT thickness was investigated. PZT thin films with a thickness of less than 30 nm did not show ferroelectric properties. The remnant polarization decreased and the coercive field increased as the PZT thickness decreased. We speculate that the increase in the residual stress and the decrease in the grain size with decreasing film thickness were the major factors in the decrease in the remnant polarization while the increase in the contribution of the low dielectric layer between the PZT and the bottom electrode contributed most to the increase in the coercive field. The leaky behavior of PZT thin films with thicknesses of less than 30 nm appeared to be due to the existence of metallic Pb at the PZT grain boundary, as observed by X-ray photoelectron spectroscopy.
      번역하기

      The property degradation of lead zirconate titanate (PZT) thin films with thickness was investigated. PZT thin films were fabricated under the optimum established conditions. PZT thin films with a thickness of less than 30 nm did not show the perovski...

      The property degradation of lead zirconate titanate (PZT) thin films with thickness was investigated. PZT thin films were fabricated under the optimum established conditions. PZT thin films with a thickness of less than 30 nm did not show the perovskite phase. When considering the thickness of the reacted layer between the PZT thin film and the Pt bottom electrode of about 10 nm in thickness, a thickness of 30 nm was considerable compared to the critical thickness (18 nm) over which PZT shows ferroelectricity. The degree of (001) orientation increased as the thickness increased due to the competition between the effect of the surface energy and that of the lattice mismatch with Pt(111). The degradation of the ferroelectricity with increasing PZT thickness was investigated. PZT thin films with a thickness of less than 30 nm did not show ferroelectric properties. The remnant polarization decreased and the coercive field increased as the PZT thickness decreased. We speculate that the increase in the residual stress and the decrease in the grain size with decreasing film thickness were the major factors in the decrease in the remnant polarization while the increase in the contribution of the low dielectric layer between the PZT and the bottom electrode contributed most to the increase in the coercive field. The leaky behavior of PZT thin films with thicknesses of less than 30 nm appeared to be due to the existence of metallic Pb at the PZT grain boundary, as observed by X-ray photoelectron spectroscopy.

      더보기

      참고문헌 (Reference)

      1 T. Sakuma, 57 : 2431-, 1990

      2 E. V. Bursian, 12 : 1850-, 1970

      3 W. L. Warren, 65 : 1018-, 1994

      4 J. F. Scott, 68 : 5783-, 1990

      5 I. K. Yoo, 133 : 565-, 1992

      6 S. Hong, KAIST 2000

      7 K. Amanuma, 32 : 4150-, 1993

      8 S. B. Ren, 55 : 3485-, 1997

      9 C. J. Lin, 90 : 1509-, 2001

      10 A. K. Tagansev, 74 : 1326-, 1999

      1 T. Sakuma, 57 : 2431-, 1990

      2 E. V. Bursian, 12 : 1850-, 1970

      3 W. L. Warren, 65 : 1018-, 1994

      4 J. F. Scott, 68 : 5783-, 1990

      5 I. K. Yoo, 133 : 565-, 1992

      6 S. Hong, KAIST 2000

      7 K. Amanuma, 32 : 4150-, 1993

      8 S. B. Ren, 55 : 3485-, 1997

      9 C. J. Lin, 90 : 1509-, 2001

      10 A. K. Tagansev, 74 : 1326-, 1999

      11 S. Li, 36 : 5169-, 1997

      12 J. K. Yang, 37 : 739-, 2000

      13 Z. Wang, 38 : 5342-, 1999

      14 G. Velu, 56 : 199-, 2000

      15 H. X. Qin, 379 : 72-, 2000

      16 K. Amanuma, 32 : 4150-, 1993

      17 S. B. Desu, 141 : 119-, 1994

      18 B. A. Tuttle, 1992

      19 W. L. Warren, 77 : 6605-, 1995

      더보기

      동일학술지(권/호) 다른 논문

      동일학술지 더보기

      더보기

      분석정보

      View

      상세정보조회

      0

      Usage

      원문다운로드

      0

      대출신청

      0

      복사신청

      0

      EDDS신청

      0

      동일 주제 내 활용도 TOP

      더보기

      주제

      연도별 연구동향

      연도별 활용동향

      연관논문

      연구자 네트워크맵

      공동연구자 (7)

      유사연구자 (20) 활용도상위20명

      인용정보 인용지수 설명보기

      학술지 이력

      학술지 이력
      연월일 이력구분 이력상세 등재구분
      2023 평가예정 해외DB학술지평가 신청대상 (해외등재 학술지 평가)
      2020-01-01 평가 등재학술지 유지 (해외등재 학술지 평가) KCI등재
      2011-01-01 평가 등재학술지 유지 (등재유지) KCI등재
      2009-01-01 평가 등재학술지 유지 (등재유지) KCI등재
      2007-01-01 평가 SCI 등재 (등재유지) KCI등재
      2005-01-01 평가 등재학술지 유지 (등재유지) KCI등재
      2002-07-01 평가 등재학술지 선정 (등재후보2차) KCI등재
      2000-01-01 평가 등재후보학술지 선정 (신규평가) KCI등재후보
      더보기

      학술지 인용정보

      학술지 인용정보
      기준연도 WOS-KCI 통합IF(2년) KCIF(2년) KCIF(3년)
      2016 0.47 0.15 0.31
      KCIF(4년) KCIF(5년) 중심성지수(3년) 즉시성지수
      0.26 0.2 0.26 0.03
      더보기

      이 자료와 함께 이용한 RISS 자료

      나만을 위한 추천자료

      해외이동버튼